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| Artikelnr.: 5695-4173239 Fabrikantnr.: TPN4R806PL,L1Q(M EAN/GTIN: geen gegevens |
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![](/p.gif) | Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0035 ohm Product Range U-MOSIX-H Series No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 105 A Operating Temperature Max 175 °C Transistor Case Style TSON Drain Source Voltage Vds 60 V Power Dissipation 104 W Qualification - Gate Source Threshold Voltage Max 2.5 V SVHC To Be Advised |
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![](/p.gif) | Andere zoekwoorden: Discretes, FETs, MOSFETs, Semiconductors, Single, TOSHIBA, TPN4R806PL,L1Q(M, 4173239, 417-3239 |
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