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| Artikelnr.:
2949E-9171467 Fabrikantnr.:
IXFH34N65X2 EAN/GTIN:
5059041037525 |
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| N-channel Power MOSFET, IXYS HiPerFET™ X2 Series. The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control. Very low RDS(on) and QG (gate charge) Fast intrinsic rectifier diode Low intrinsic gate resistance Low package inductance Industry standard packages Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 34 A | Maximum Drain Source Voltage: | 650 V | Package Type: | TO-247 | Series: | HiperFET, X2-Class | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 100 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Minimum Gate Threshold Voltage: | 2.7V | Maximum Power Dissipation: | 540 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -30 V, +30 V | Length: | 16.24mm |
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| Andere zoekwoorden: 9171467, Semiconductors, Discrete Semiconductors, MOSFETs, IXYS, IXFH34N65X2 |
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