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| Artikelnr.: 2949E-9064400 Fabrikantnr.: BSC900N20NS3GATMA1 EAN/GTIN: 5059043836584 |
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![](/p.gif) | Infineon OptiMOS™3 Power MOSFETs, 100V and over Meer informatie: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 15.2 A | Maximum Drain Source Voltage: | 200 V | Package Type: | TDSON | Series: | OptiMOS™ 3 | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 90 mΩ | Channel Mode: | Enhancement | Maximum Power Dissipation: | 62.5 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 6.1mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 1 |
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![](/p.gif) | Andere zoekwoorden: 9064400, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, BSC900N20NS3GATMA1 |
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