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| Artikelnr.:
2949E-2282987 Fabrikantnr.:
SUM90100E-GE3 EAN/GTIN:
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| Channel Type = N
Maximum Continuous Drain Current = 150 A
Maximum Drain Source Voltage = 200 V
Series = TrenchFET
Mounting Type = Surface Mount
Pin Count = 3
Maximum Drain Source Resistance = 0.0114 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 4V
Transistor Material = Si Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 150 A | Maximum Drain Source Voltage: | 200 V | Package Type: | D2PAK (TO-263) | Series: | TrenchFET | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.0114 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Andere zoekwoorden: 2282987, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SUM90100EGE3 |
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