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| Artikelnr.:
2949E-2282925 Fabrikantnr.:
SiS590DN-T1-GE3 EAN/GTIN:
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| Channel Type = N, P
Maximum Continuous Drain Current = 4 A
Maximum Drain Source Voltage = 100 V
Series = TrenchFET
Mounting Type = Surface Mount
Pin Count = 8
Maximum Drain Source Resistance = 0.167 O, 0.251 O
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 2.5 V, 2.5 V
Number of Elements per Chip = 2 Meer informatie: | | Channel Type: | N, P | Maximum Continuous Drain Current: | 4 A | Maximum Drain Source Voltage: | 100 V | Package Type: | PowerPAK 1212-8 Dual | Series: | TrenchFET | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.167 O, 0.251 O | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.5 V, 2.5 V | Number of Elements per Chip: | 2 | Transistor Material: | Si |
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| Andere zoekwoorden: 2282925, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SiS590DNT1GE3 |
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