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| Artikelnr.:
2949E-2266109 Fabrikantnr.:
IKQ120N60TXKSA1 EAN/GTIN:
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| The Infineon IKQ120N60T has 600 V hard switching IGBT discrete with anti-parallel diode used higher system power density Ic which increase keeping the same system thermal performance and It has higher reliability with extended lifetime of the device.35% bigger active thermal pad area for up to 20% lower thermal resistance R th(jh) Extended creepage distance of 4.25 mm – 2 mm bigger than TO-247 Meer informatie: | | Maximum Continuous Collector Current: | 160 A | Maximum Collector Emitter Voltage: | 600 V | Maximum Gate Emitter Voltage: | 20V | Maximum Power Dissipation: | 833 W | Number of Transistors: | 1 | Configuration: | Single | Package Type: | PG-TO247 | Channel Type: | N | Pin Count: | 3 | Transistor Configuration: | Single |
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| Andere zoekwoorden: Transistor, Transistors, 2266109, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKQ120N60TXKSA1 |
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