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| Artikelnr.:
2949E-2224861 Fabrikantnr.:
IMW120R350M1HXKSA1 EAN/GTIN:
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| Channel Type = N
Maximum Continuous Drain Current = 4.7 A
Maximum Drain Source Voltage = 1200 V
Series = IMW1
Mounting Type = Through Hole
Pin Count = 3
Maximum Drain Source Resistance = 350 mΩ
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 4.5V
Number of Elements per Chip = 1 Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 4.7 A | Maximum Drain Source Voltage: | 1200 V | Package Type: | TO-247 | Series: | IMW1 | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 350 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4.5V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Andere zoekwoorden: 2224861, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IMW120R350M1HXKSA1 |
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