| |
|
| Artikelnr.: 2949E-2224849 Fabrikantnr.: IMBF170R1K0M1XTMA1 EAN/GTIN: geen gegevens |
| |
|
| | |
| The Infineon CoolSiC™ 1700 V, 1000 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.Optimized for fly-back topologies Extremely low switching loss 12 V / 0 V gate-source voltage compatible with fly-back controllers Fully controllable dV/dt for EMI optimization SMD package with enhanced creepage and clearance distances, > 7 mm Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 5.2 A | Maximum Drain Source Voltage: | 1700 V | Package Type: | TO-263-7 | Series: | IMBF1 | Mounting Type: | Surface Mount | Pin Count: | 7 | Maximum Drain Source Resistance: | 1000 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4.5V | Number of Elements per Chip: | 1 |
|
| | |
| | | |
| Andere zoekwoorden: 2224849, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IMBF170R1K0M1XTMA1 |
| | |
| |