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| Artikelnr.:
2949E-2216731 Fabrikantnr.:
NTMFS4D2N10MDT1G EAN/GTIN:
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| The ON Semiconductor N-Channel MV MOSFET is produced using an advanced power trench process that incorporates shielded gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with very low Qg and Qoss.Low RDS(on) to minimize conduction losses Low QG and capacitance to minimize driver losses Low QRR, soft recovery body diode Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 113 A | Maximum Drain Source Voltage: | 100 V | Package Type: | DFN | Series: | NTMFS4D2N | Mounting Type: | Surface Mount | Pin Count: | 5 | Maximum Drain Source Resistance: | 0.0043 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Andere zoekwoorden: 2216731, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NTMFS4D2N10MDT1G |
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