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| Artikelnr.:
2949E-2194224 Fabrikantnr.:
SCTH70N120G2V-7 EAN/GTIN:
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| The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.Very high operating junction temperature capability (TJ = 175 °C) Very fast and robust intrinsic body diode Extremely low gate charge and input capacitances Meer informatie: | | Maximum Continuous Drain Current: | 90 A | Maximum Drain Source Voltage: | 1200 V | Package Type: | H2PAK-7 | Series: | SCTH70N | Mounting Type: | Surface Mount | Pin Count: | 7 | Maximum Drain Source Resistance: | 0.21 O | Maximum Gate Threshold Voltage: | 4.9V | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 2194224, Semiconductors, Discrete Semiconductors, MOSFETs, STMicroelectronics, SCTH70N120G2V7 |
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