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| Artikelnr.:
2949E-2184390 Fabrikantnr.:
IGB50N65H5ATMA1 EAN/GTIN:
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| The Infineon TRENCHSTOP IGBT5 technology redefines best-in-class IGBT resulting in lower junction and case temperature leading to higher device reliability by providing unmatched performance in terms of efficiency for hard switching applications. It has collector emitter voltage of 650 V and collector current of 80 A.Higher power density design 50V increase in the bus voltage possible without compromising reliability Mild positive temperature coefficient Meer informatie: | | Maximum Continuous Collector Current: | 80 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | 20V | Maximum Power Dissipation: | 270 W | Number of Transistors: | 1 | Package Type: | TO-263 | Channel Type: | N | Pin Count: | 3 |
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| Andere zoekwoorden: Transistors, 2184390, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IGB50N65H5ATMA1 |
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