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| Artikelnr.:
2949E-2152606 Fabrikantnr.:
IRLR2905TRLPBF EAN/GTIN:
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| The Infineon HEXFET Power MOSFET series has 55V maximum drain source voltage it is a single N-Channel HEXFET Power MOSFET in a D-Pak package type. The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-pack is designed for surface mounting using vapour phase, infrared or wave soldering technique.Advanced Process Technology Ultra Low On-Resistance Lead-Free Fully avalanche rated Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 42 A | Maximum Drain Source Voltage: | 55 V | Package Type: | DPAK (TO-252) | Series: | HEXFET | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.027 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Andere zoekwoorden: 2152606, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRLR2905TRLPBF |
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