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| Artikelnr.:
2949E-2104969 Fabrikantnr.:
SIHB15N80AE-GE3 EAN/GTIN:
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| The Vishay E Series Power MOSFET has D2PAK (TO-263) package type with 13 A drain current.Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Co(er)) Reduced switching and conduction losses Avalanche energy rated (UIS) Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 13 A | Maximum Drain Source Voltage: | 800 V | Package Type: | D2PAK (TO-263) | Series: | E | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.304 Ω | Maximum Gate Threshold Voltage: | 2 → 4V | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 2104969, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIHB15N80AEGE3 |
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