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| Artikelnr.:
2949E-1958771 Fabrikantnr.:
NXH100B120H3Q0STG EAN/GTIN:
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| The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.IGBT Specifications: VCE(SAT) = 1.77 V, ESW = 2200 uJ Fast IGBT with low VCE(SAT) for high efficiency 25 A / 1600 V Bypass and Anti−parallel Diodes Low VF bypass diodes for excellent efficiency in bypass mode SiC Rectifier Specification: VF = 1.44 V SiC Diode for high speed switching Solder pin and press-fit pin options available Flexible mounting Applications MPPT Boost Stage Battery Charger Boost Stage Meer informatie: | | Maximum Collector Emitter Voltage: | 1200 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 186 W | Configuration: | Dual | Package Type: | Q0BOOST | Mounting Type: | Surface Mount | Channel Type: | N | Pin Count: | 22 | Transistor Configuration: | Dual | Dimensions: | 66.2 x 32.8 x 11.9mm | Maximum Operating Temperature: | +150 °C | Minimum Operating Temperature: | -40 °C | Width: | 32.8mm |
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| Andere zoekwoorden: Transistors, 1958771, Semiconductors, Discrete Semiconductors, IGBTs, onsemi, NXH100B120H3Q0STG |
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