onsemi 650V 10.1A, SiC Schottky Diode, 2-Pin TO-220 FFSP0865B

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.Max Junction Temperature 175°C High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery These Devices are Pb−Free, Halogen Free/BFR Free Applications General Purpose SMPS, Solar Inverter, UPS Power Switching Circuits