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| Artikelnr.: 2949E-1952458 Fabrikantnr.: NCV51705MNTWG EAN/GTIN: geen gegevens |
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![](/p.gif) | The NCV51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turn−off, the NCV51705 can utilize its on−board charge pump to generate a user selectable negative voltage rail. For isolated applications, the NCV51705 also provides an externally accessible 5 V rail to power the secondary side of digital or high speed opto isolators. Meer informatie: ![](/p.gif) | ![](/p.gif) | Package Type: | QFN24 | Mounting Type: | Surface Mount | Pin Count: | 24 | Channel Mode: | Enhancement | Transistor Configuration: | Single | Length: | 4.1mm | Maximum Operating Temperature: | +125 °C | Number of Elements per Chip: | 1 | Transistor Material: | SiC | Width: | 4.1mm | Automotive Standard: | AEC-Q100 | Height: | 0.85mm | Minimum Operating Temperature: | -40 °C |
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![](/p.gif) | Andere zoekwoorden: 1952458, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NCV51705MNTWG |
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