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| Artikelnr.:
2949E-1945742 Fabrikantnr.:
FFSB0665B EAN/GTIN:
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| Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.High UIS, Surge Current, and Avalanche High Junction Temperature Low Vf No Qrr 49mJ @ 25C Tj = 175C 1.41V < 100nC Applications PFC UPS Servers Boost-Buck Inverters Meer informatie: | | Mounting Type: | Surface Mount | Package Type: | D2PAK | Maximum Continuous Forward Current: | 8A | Peak Reverse Repetitive Voltage: | 650V | Diode Configuration: | Single | Rectifier Type: | Schottky Diode | Diode Type: | SiC Schottky | Pin Count: | 3 | Number of Elements per Chip: | 1 | Diode Technology: | SiC Schottky | Peak Non-Repetitive Forward Surge Current: | 523A |
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