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| Artikelnr.:
2949E-1888395 Fabrikantnr.:
STD11N65M2 EAN/GTIN:
5059045752653 |
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| These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.Extremely low gate charge Excellent output capacitance (COSS) profile Zener-protected Applications Switching applications Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 7 A | Package Type: | DPAK (TO-252) | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 680 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 85 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±25 V | Length: | 6.6mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 1888395, Semiconductors, Discrete Semiconductors, MOSFETs, STMicroelectronics, STD11N65M2 |
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