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| Artikelnr.: 2949E-1888287 Fabrikantnr.: STD13N60DM2 EAN/GTIN: geen gegevens |
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![](/p.gif) | Channel Type = N Maximum Continuous Drain Current = 11 A Package Type = DPAK (TO-252) Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance = 360 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Minimum Gate Threshold Voltage = 3V Maximum Power Dissipation = 110 W Transistor Configuration = Single Maximum Gate Source Voltage = ±25 V Width = 6.2mm Height = 2.17mm Meer informatie: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 11 A | Package Type: | DPAK (TO-252) | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 360 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Minimum Gate Threshold Voltage: | 3V | Maximum Power Dissipation: | 110 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±25 V | Length: | 6.6mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 1 |
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![](/p.gif) | Andere zoekwoorden: 1888287, Semiconductors, Discrete Semiconductors, MOSFETs, STMicroelectronics, STD13N60DM2 |
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