Dual MOSFET, 6-Pin TSOT-23 onsemi FDC3601N

These N-Channel 100V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.1.0 A, 100 V RDS(on) = 500 mΩ@ VGS = 10 V RDS(on) = 550 mΩ @ VGS = 6 V Low gate charge (3.7nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) SuperSOT™-6 package: small footprint 72%(smaller than standard SO-8), low profile (1mm thick) Applications This product is general usage and suitable for many different applications.