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| Artikelnr.:
2949E-1867386 Fabrikantnr.:
FDMC86262P EAN/GTIN:
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| This P-Channel MOSFET is produced using an advanced PowerTrench® technology. This very high density process is especially tailored to minimize on- state resistance and optimizad for superior switching performance.Max rDS(on) = 307 mΩ at VGS = -10 V, ID = -2 A Max rDS(on) = 356 mΩ at VGS = -6 V, ID = -1.8 A Very Low rDS(on) Mid Voltage P-Channel Silicon Technology Optimised for Low Qg Optimised for Fast Switching Applications as well as Load Switch Applications Applications Industrial Portable and Wireless Meer informatie: | | Package Type: | MLP 3.3 x 3.3 | Mounting Type: | Surface Mount | Maximum Power Dissipation: | 40 W | Pin Count: | 8 | Number of Elements per Chip: | 1 | Dimensions: | 3.3 x 3.3 x 0.72mm | Maximum Operating Temperature: | +150 °C | Length: | 3.3mm | Minimum Operating Temperature: | -55 °C | Width: | 3.3mm |
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| Andere zoekwoorden: digitale transistor, 1867386, Semiconductors, Discrete Semiconductors, Bipolar Transistors, onsemi, FDMC86262P |
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