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| Artikelnr.:
2949E-1858160 Fabrikantnr.:
NVMTS0D7N04CTXG EAN/GTIN:
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| Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.Small Footprint (8x8 mm) Low RDS(on) Low QG and Capacitance Wettable Flank Option PPAP Capable Compact Design Minimize Conduction Losses Minimize Driver Losses Enhanced Optical Inspection Applications Reverser Battery protection Switching power supplies Power switches (High Side Driver, Low Side Driver, H-Bridges etc.) End Products Motor Control – EPS, Wipers, Fans, Seats, etc. Load Switch – ECU, Chassis, Body Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 420 A | Maximum Drain Source Voltage: | 40 V | Package Type: | DFNW8 | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 670 μΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 205 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 8.1mm | Maximum Operating Temperature: | +175 °C |
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| Andere zoekwoorden: 1858160, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NVMTS0D7N04CTXG |
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