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| Artikelnr.:
2949E-1858135 Fabrikantnr.:
NTBS2D7N06M7 EAN/GTIN:
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| Typical RDS(on) = 2.2 m at VGS = 10 V, ID = 80 A Typical Qg(tot) = 80 nC at VGS = 10 V, ID = 80 A UIS Capability These Devices are Pb−Free Applications Industrial Motor Drive Industrial Power Supply Industrial Automation Battery Operated Tools Battery Protection Solar Inverters UPS and Energy Inverters Energy Storage Load Switch Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 110 A | Maximum Drain Source Voltage: | 60 V | Package Type: | D2PAK (TO-263) | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 5 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 176 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 10.67mm | Maximum Operating Temperature: | +175 °C |
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| Andere zoekwoorden: 1858135, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NTBS2D7N06M7 |
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