N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220FM ROHM R8010ANX

Channel Type = N
Maximum Continuous Drain Current = 10 A
Maximum Drain Source Voltage = 800 V
Package Type = TO-220FM
Mounting Type = Through Hole
Pin Count = 3
Maximum Drain Source Resistance = 950 mΩ
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 5V
Minimum Gate Threshold Voltage = 3V
Maximum Power Dissipation = 40 W
Transistor Configuration = Single
Maximum Gate Source Voltage = ±30 V
Length = 10.3mm
Maximum Operating Temperature = +150 °C

Meer informatie:

Channel Type:	N
Maximum Continuous Drain Current:	10 A
Maximum Drain Source Voltage:	800 V
Package Type:	TO-220FM
Mounting Type:	Through Hole
Pin Count:	3
Maximum Drain Source Resistance:	950 mΩ
Channel Mode:	Enhancement
Maximum Gate Threshold Voltage:	5V
Minimum Gate Threshold Voltage:	3V
Maximum Power Dissipation:	40 W
Transistor Configuration:	Single
Maximum Gate Source Voltage:	±30 V
Length:	10.3mm
Maximum Operating Temperature:	+150 °C