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| Artikelnr.:
2949E-1688966 Fabrikantnr.:
SCT30N120 EAN/GTIN:
5059042333275 |
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| N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics. Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems. Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 45 A | Maximum Drain Source Voltage: | 1200 V | Package Type: | HiP247 | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 100 mΩ | Channel Mode: | Enhancement | Maximum Power Dissipation: | 270 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -10 V, +25 V | Length: | 15.75mm | Maximum Operating Temperature: | +200 °C | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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