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| Artikelnr.:
2949E-1646960 Fabrikantnr.:
STI28N60M2 EAN/GTIN:
5059042196467 |
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| These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.Extremely low gate charge Excellent output capacitance (COSS ) profile 100% avalanche tested Zener-protected Extremely low Qg for increased efficiency Optimized gate charge and capacitance profiles for resonant power supplies (LLC converters) Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 22 A | Maximum Drain Source Voltage: | 650 V | Package Type: | D2PAK (TO-263) | Series: | STI28 | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 150 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 170 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | +25 V | Length: | 10.4mm |
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| Andere zoekwoorden: 1646960, Semiconductors, Discrete Semiconductors, MOSFETs, STMicroelectronics, STI28N60M2 |
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