|  |
| |
| Artikelnr.:
2949E-1349713 Fabrikantnr.:
SI3493DDV-T1-GE3 EAN/GTIN:
5059040667112 |
| |
|
| | |
| P-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor Meer informatie: | | Channel Type: | P | Maximum Continuous Drain Current: | 8 A | Maximum Drain Source Voltage: | 20 V | Package Type: | TSOP-6 | Series: | TrenchFET | Mounting Type: | Surface Mount | Pin Count: | 6 | Maximum Drain Source Resistance: | 51 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 1V | Minimum Gate Threshold Voltage: | 0.4V | Maximum Power Dissipation: | 3.6 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -8 V, +8 V | Length: | 3.1mm |
|
| | |
| | | |
| Andere zoekwoorden: 1349713, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SI3493DDVT1GE3 |
| | |
| |