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| Artikelnr.:
2949E-1349709 Fabrikantnr.:
SIHP065N60E-GE3 EAN/GTIN:
5059040666955 |
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| N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor. The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS). Features. Low figure-of-merit (FOM) RDS(on) x Qg Low input capacitance (Ciss) Low on-resistance (RDS(on)) Ultra-low gate charge (Qg) Fast switching Reduced switching and conduction losses Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 40 A | Maximum Drain Source Voltage: | 600 V | Package Type: | TO-220AB | Series: | E Series | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 65 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Minimum Gate Threshold Voltage: | 3V | Maximum Power Dissipation: | 250 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -30 V, +30 V | Length: | 10.51mm |
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| Andere zoekwoorden: mosfet 30v, mosfet 600v, 1349709, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIHP065N60EGE3 |
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