N-Channel MOSFET, 1 A, 20 V, 3-Pin DFN ROHM RV2C010UNT2L

Channel Type = N
Maximum Continuous Drain Current = 1 A
Maximum Drain Source Voltage = 20 V
Package Type = DFN
Series = RV2C010UN
Mounting Type = Surface Mount
Pin Count = 3
Maximum Drain Source Resistance = 1.05 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 1V
Minimum Gate Threshold Voltage = 0.3V
Maximum Power Dissipation = 400 mW
Transistor Configuration = Single
Maximum Gate Source Voltage = -8 V, +8 V
Length = 0.65mm

Meer informatie:

Channel Type:	N
Maximum Continuous Drain Current:	1 A
Maximum Drain Source Voltage:	20 V
Package Type:	DFN
Series:	RV2C010UN
Mounting Type:	Surface Mount
Pin Count:	3
Maximum Drain Source Resistance:	1.05 Ω
Channel Mode:	Enhancement
Maximum Gate Threshold Voltage:	1V
Minimum Gate Threshold Voltage:	0.3V
Maximum Power Dissipation:	400 mW
Transistor Configuration:	Single
Maximum Gate Source Voltage:	-8 V, +8 V
Length:	0.65mm