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| Artikelnr.: 2949E-1250560 Fabrikantnr.: TK28E65W,S1X(S EAN/GTIN: 5059041157445 |
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![](/p.gif) | Channel Type = N Maximum Continuous Drain Current = 27.6 A Maximum Drain Source Voltage = 650 V Package Type = TO-220 Series = DTMOSIV Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 110 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V Minimum Gate Threshold Voltage = 2.5V Maximum Power Dissipation = 230 W Maximum Gate Source Voltage = -30 V, +30 V Length = 10.16mm Maximum Operating Temperature = +150 °C Meer informatie: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 27.6 A | Maximum Drain Source Voltage: | 650 V | Package Type: | TO-220 | Series: | DTMOSIV | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 110 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3.5V | Minimum Gate Threshold Voltage: | 2.5V | Maximum Power Dissipation: | 230 W | Maximum Gate Source Voltage: | -30 V, +30 V | Length: | 10.16mm | Maximum Operating Temperature: | +150 °C |
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![](/p.gif) | Andere zoekwoorden: 1250560, Semiconductors, Discrete Semiconductors, MOSFETs, Toshiba, TK28E65W,S1X(S |
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