N-Channel MOSFET, 27.6 A, 650 V, 3-Pin TO-220 Toshiba TK28E65W,S1X(S

Channel Type = N
Maximum Continuous Drain Current = 27.6 A
Maximum Drain Source Voltage = 650 V
Package Type = TO-220
Series = DTMOSIV
Mounting Type = Through Hole
Pin Count = 3
Maximum Drain Source Resistance = 110 mΩ
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 3.5V
Minimum Gate Threshold Voltage = 2.5V
Maximum Power Dissipation = 230 W
Maximum Gate Source Voltage = -30 V, +30 V
Length = 10.16mm
Maximum Operating Temperature = +150 °C

Meer informatie:

Channel Type:	N
Maximum Continuous Drain Current:	27.6 A
Maximum Drain Source Voltage:	650 V
Package Type:	TO-220
Series:	DTMOSIV
Mounting Type:	Through Hole
Pin Count:	3
Maximum Drain Source Resistance:	110 mΩ
Channel Mode:	Enhancement
Maximum Gate Threshold Voltage:	3.5V
Minimum Gate Threshold Voltage:	2.5V
Maximum Power Dissipation:	230 W
Maximum Gate Source Voltage:	-30 V, +30 V
Length:	10.16mm
Maximum Operating Temperature:	+150 °C