Transistor  (13.380 artikelen gevonden)

General Purpose NPN Transistors, STMicroelectronics

Maximum Continuous Collector Current = 90 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ± 20V Number of Transistors = 1 Configuration = Single Mounting Type = Panel Mou...

Darlington Transistor Arrays, Texas Instruments. A range of Darlington transistor arrays from Texas Instruments suitable for a wide range of medium to high current driver applications.

Maximum Continuous Collector Current = 247 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ± 20V Number of Transistors = 2 Configuration = Half Bridge Mounting Type = Pan...

Power Management Function = IGBT Gate Driver Kit Classification = Demonstration Board Featured Device = STGAP1BS Kit Name = Demonstration Board

The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduct...

Transistor Type = NPN Maximum Continuous Collector Current = 500 mA Maximum Collector Emitter Voltage = 50 V Package Type = TSSOP Pin Count = 16

Maximum Continuous Collector Current = 372 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ± 20V Number of Transistors = 2 Package Type = INT-A-PAK Mounting Type = Panel ...

Maximum Continuous Collector Current = 60 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 260 W Package Type = H2PAK-2

Transistor Type = NPN Maximum Collector Emitter Voltage = 50 V Package Type = TSSOP Pin Count = 16 Number of Elements per Chip = 1

Maximum Continuous Collector Current = 193 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ± 20V Maximum Power Dissipation = 517 W Package Type = INT-A-PAK Mounting Type ...

The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduct...

The STMicroelectronics short circuit rugged IGBT combines new ST proprietary control Ics with short-circuit rugged trench gate field-stop IGBT making it useful for motor drives operating up to 20 k...

Peak Sensor Distance = 0.9mm Output Device = Transistor Typical Rise Time = 10µs Typical Fall Time = 15µs Number of Channels = 1 Mounting Type = Surface Mount Package Type = SMD Series = VCNT2030

Maximum Continuous Collector Current = 359 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ± 20V Maximum Power Dissipation = 750 W Package Type = SOT-227 Mounting Type = ...