memory chips  (5.598 artikelen gevonden)

Very high speed: 45 ns Voltage range: 4.5 V to 5.5 V Pin compatible with CY62148B Ultra low standby power Typical standby current: 1 μA Maximum standby current: 7 μA (Industrial) Ultra low active p...

Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor. The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifi...

EPROM (One Time Programmable), Atmel

FRAM, Cypress Semiconductor. Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Part...

Temperature ranges Industrial: –40 °C to 85 °C Automotive-A: –40 °C to 85 °C Pin-and function-compatible with CY7C1021CV33 High speed tAA = 10 ns Low active power ICC = 60 mA @ 10 ns Low CMOS stand...

Asynchronous Static RAM Memory, Cypress Semiconductor

25AA02Exx SPI Serial EEPROM

2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K x 8 Virtually unlimited endurance of 10 trillion (1013) read/write cycles 121-year data retention NoDelay™ writes Advan...

Memory Size = 4Mbit Organisation = 256k x 16 Number of Words = 256k Number of Bits per Word = 16bit Maximum Random Access Time = 10ns Address Bus Width = 16bit Clock Frequency = 1MHz Low Power = Ye...

Asynchronous Static RAM Memory, Cypress Semiconductor

25AA02UID SPI Serial EEPROM

Memory Size = 4kbit Organisation = 512M x 8 bit Interface Type = Serial-SPI Data Bus Width = 8bit Maximum Random Access Time = 20ns Mounting Type = Surface Mount Package Type = SOIC Pin Count = 8 D...

Memory Size = 4Mbit Organisation = 512k x 8 Number of Words = 512k Number of Bits per Word = 8bit Maximum Random Access Time = 10ns

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

EPROM (One Time Programmable), Atmel