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  emitters  (7.007 artikelen gevonden)

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92%
Infineon FF900R12IP4BOSA2 IGBT Module, 900 A 1200 V (1 zoekresultaat) 
Maximum Continuous Collector Current = 900 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 2
Infineon
FF900R12IP4BOSA2
vanaf € 552,394*
per stuk
 
 stuk
92%
Infineon F3L600R10W4S7FC22BPSA1 IGBT, 310 A 950 V EasyPACK Module (1 zoekresultaat) 
Maximum Continuous Collector Current = 310 A Maximum Collector Emitter Voltage = 950 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 20 mW Package Type = EasyPACK Module
Infineon
SP005434947
vanaf € 1.626,294*
per 6 stuks
 
 verpakking
92%
Infineon FF225R17ME7B11BPSA1 IGBT Module, 225 A 1700 V (1 zoekresultaat) 
Maximum Continuous Collector Current = 225 A Maximum Collector Emitter Voltage = 1700 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 2
Infineon
FF225R17ME7B11BPSA1
vanaf € 1.226,69*
per 10 stuks
 
 verpakking
92%
Infineon FF300R12KT4HOSA1 IGBT Module, 450 A 1200 V (2 zoekresultaten) 
Maximum Continuous Collector Current = 450 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 1.6 kW
Infineon
FF300R12KT4HOSA1
vanaf € 103,909*
per stuk
 
 stuk
92%
Infineon FF900R17ME7B11BPSA1 IGBT Module, 900 A 1700 V (1 zoekresultaat) 
Maximum Continuous Collector Current = 900 A Maximum Collector Emitter Voltage = 1700 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 20 mW
Infineon
FF900R17ME7B11BPSA1
vanaf € 269,872*
per stuk
 
 stuk
92%
Infineon FD150R12RT4HOSA1 IGBT Module, 150 A 1200 V (1 zoekresultaat) 
Maximum Continuous Collector Current = 150 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 1
Infineon
FD150R12RT4HOSA1
vanaf € 95,893*
per stuk
 
 stuk
92%
Infineon FF900R12IP4BOSA2 IGBT Module, 900 A 1200 V (1 zoekresultaat) 
Maximum Continuous Collector Current = 900 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 5.1 kW
Infineon
FF900R12IP4BOSA2
vanaf € 1.435,563*
per 3 stuks
 
 verpakking
92%
Infineon FF750R17ME7DB11BPSA1 IGBT Module, 750 A 1700 V (1 zoekresultaat) 
Maximum Continuous Collector Current = 750 A Maximum Collector Emitter Voltage = 1700 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 20 mW
Infineon
FF750R17ME7DB11BPSA1
vanaf € 1.917,72*
per 10 stuks
 
 verpakking
92%
Infineon FP100R12KT4B11BOSA1 IGBT Module, 100 A 1200 V (1 zoekresultaat) 
Maximum Continuous Collector Current = 100 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = +/-20V Maximum Power Dissipation = 515 W
Infineon
FP100R12KT4B11BOSA1
vanaf € 160,248*
per stuk
 
 stuk
92%
Infineon FF300R12KT4HOSA1 IGBT Module, 450 A 1200 V (1 zoekresultaat) 
Maximum Continuous Collector Current = 450 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 1.6 kW
Infineon
FF300R12KT4HOSA1
vanaf € 113,177*
per stuk
 
 stuk
92%
Infineon FF900R17ME7B11BPSA1 IGBT Module, 900 A 1700 V (2 zoekresultaten) 
Maximum Continuous Collector Current = 900 A Maximum Collector Emitter Voltage = 1700 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 20 mW
Infineon
FF900R17ME7B11BPSA1
vanaf € 294,867*
per stuk
 
 stuk
92%
Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V (1 zoekresultaat) 
Maximum Continuous Collector Current = 100 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = +/-20V Maximum Power Dissipation = 515 W
Infineon
FP100R12KT4BOSA1
vanaf € 148,604*
per stuk
 
 stuks
92%
Infineon FP10R12W1T4BOMA1 IGBT Module, 20 A 1200 V (1 zoekresultaat) 
Maximum Continuous Collector Current = 20 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = +/-20V Number of Transistors = 7
Infineon
FP10R12W1T4BOMA1
vanaf € 31,839*
per stuk
 
 stuk
92%
Infineon FF750R17ME7DB11BPSA1 IGBT Module, 750 A 1700 V (1 zoekresultaat) 
Maximum Continuous Collector Current = 750 A Maximum Collector Emitter Voltage = 1700 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 2
Infineon
FF750R17ME7DB11BPSA1
vanaf € 190,806*
per stuk
 
 stuk
92%
Infineon FP100R12KT4B11BOSA1 IGBT Module, 100 A 1200 V (2 zoekresultaten) 
Maximum Continuous Collector Current = 100 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = +/-20V Number of Transistors = 7
Infineon
FP100R12KT4B11BOSA1
vanaf € 147,584*
per stuk
 
 stuk
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