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92%

Infineon FS950R08A6P2BBPSA1 IGBT Module, 950 A 750 V HybridPACK (1 zoekresultaat)

Maximum Continuous Collector Current = 950 A Maximum Collector Emitter Voltage = 750 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 6 Package Type = HybridPACK

Infineon

FS950R08A6P2BBPSA1

vanaf € 3.469,46004*
per 6 stuks

92%

Infineon IHW20N135R5XKSA1 IGBT, 40 A 1350 V, 3-Pin PG-TO247-3 (1 zoekresultaat)

Maximum Continuous Collector Current = 40 A Maximum Collector Emitter Voltage = 1350 V Maximum Gate Emitter Voltage = ±20 V, ±25 V Maximum Power Dissipation = 310 W Package Type = PG-TO247-3 Pin Co...

Infineon

IHW20N135R5XKSA1

vanaf € 2,195*
per stuk

92%

Infineon FZ1600R33HE4BPSA1 Single IGBT Module, 1.6 kA 3300 V AG-IHVB130 (1 zoekresultaat)

Maximum Continuous Collector Current = 1.6 kA Maximum Collector Emitter Voltage = 3300 V Maximum Power Dissipation = 3600 kW Package Type = AG-IHVB130

Infineon

FZ1600R33HE4BPSA1

vanaf € 1.320,815*
per stuk

92%

Infineon IHW40N135R5XKSA1 IGBT, 80 A 1350 V, 3-Pin PG-TO247-3 (2 zoekresultaten)

The Infineon insulated-gate bipolar transistor of resonant switching series with low saturation voltage.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference

Infineon

IHW40N135R5XKSA1

vanaf € 2,63*
per stuk

92%

Infineon FZ1800R45HL4BPSA1 Single IGBT Module, 1.8 kA 4500 V AG-IHVB190 (1 zoekresultaat)

Maximum Continuous Collector Current = 1.8 kA Maximum Collector Emitter Voltage = 4500 V Maximum Power Dissipation = 4000 kW Package Type = AG-IHVB190

Infineon

FZ1800R45HL4BPSA1

vanaf € 1.917,018*
per stuk

92%

Infineon IHW30N65R5XKSA1 IGBT, 60 A 650 V, 3-Pin PG-TO247-3 (1 zoekresultaat)

The Infineon resonant switching series reverse conducting insulated-gate bipolar transistor with monolithic body diode.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic...

Infineon

IHW30N65R5XKSA1

vanaf € 1,733*
per stuk

92%

Infineon FZ400R12KE4HOSA1 IGBT Module, 400 A 1200 V Module, Panel Mount (1 zoekresultaat)

Maximum Continuous Collector Current = 400 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = +/-20V Maximum Power Dissipation = 2.4 kW Package Type = Module Mounting Type ...

Infineon

FZ400R12KE4HOSA1

vanaf € 749,33*
per 10 stuks

92%

Infineon IHW50N65R6XKSA1 IGBT, 83 A 650 V, 3-Pin PG-TO247-3 (1 zoekresultaat)

The Infineon IHW50N65R6 is the 650 V, 50 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction...

Infineon

IHW50N65R6XKSA1

vanaf € 419,40*
per 240 stuks

92%

Infineon FZ400R12KE4HOSA1 IGBT Module, 400 A 1200 V Module, Panel Mount (1 zoekresultaat)

Infineon

FZ400R12KE4HOSA1

vanaf € 77,68*
per stuk

92%

Infineon IHW40N120R5XKSA1 IGBT, 80 A 1200 V, 3-Pin PG-TO247-3 (1 zoekresultaat)

Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20 V, ±25 V Maximum Power Dissipation = 394 W Package Type = PG-TO247-3 Pin Co...

Infineon

IHW40N120R5XKSA1

vanaf € 2,631*
per stuk

92%

Infineon FZ825R33HE4DBPSA1 Single IGBT Module, 825 A 3300 V AG-IHVB130 (2 zoekresultaten)

Maximum Continuous Collector Current = 825 A Maximum Collector Emitter Voltage = 3300 V Maximum Power Dissipation = 2400 kW Package Type = AG-IHVB130

Infineon

FZ825R33HE4DBPSA1

vanaf € 993,667*
per stuk

92%

Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3 (3 zoekresultaten)

Maximum Continuous Collector Current = 30 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20 V, ±30 V Maximum Power Dissipation = 105 W Package Type = PG-TO263-3 Pin Cou...

Infineon

IKB15N65EH5ATMA1

vanaf € 1,095*
per stuk

92%

Infineon FZ825R33HE4DBPSA1 Single IGBT Module, 825 A 3300 V AG-IHVB130 (1 zoekresultaat)

Maximum Continuous Collector Current = 825 A Maximum Collector Emitter Voltage = 3300 V Number of Transistors = 2 Package Type = AG-IHVB130

Infineon

FZ825R33HE4DBPSA1

vanaf € 999,951*
per stuk

92%

Infineon IHW50N65R5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO247-3 (1 zoekresultaat)

The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference

Infineon

IHW50N65R5XKSA1

vanaf € 1,48*
per stuk

92%

Infineon IGP50N60TXKSA1 IGBT Transistor Module, 90 A 600 V PG-TO220-3 (1 zoekresultaat)

Maximum Continuous Collector Current = 90 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 3 Package Type = PG-TO220-3

Infineon

IGP50N60TXKSA1

vanaf € 2,70*
per stuk

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emitters (6.949 artikelen gevonden)