emitters  (7.007 artikelen gevonden)

The Infineon high speed H5 technology insulated-gate bipolar transistor offering best-in-class efficiency in hard switching and resonant topologies.High Efficiency Low Switching Losses Increased Re...

Maximum Continuous Collector Current = 200 A Maximum Collector Emitter Voltage = 750 V Maximum Gate Emitter Voltage = 15V Maximum Power Dissipation = 1.07 kW Package Type = TO247PLUS

The Infineon three pin high speed fast insulated-gate bipolar transistor.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference

Maximum Continuous Collector Current = 120 A Maximum Collector Emitter Voltage = 750 V Maximum Gate Emitter Voltage = 15V Number of Transistors = 3 Package Type = TO247PLUS

Maximum Continuous Collector Current = 200 A Maximum Collector Emitter Voltage = 750 V Maximum Gate Emitter Voltage = 15V Number of Transistors = 3 Package Type = TO247PLUS

The Infineon insulated-gate bipolar transistor has fieldstop technology with soft fast recovery antiparallel emitter controlled diode.High Efficiency Low Switching Losses Increased Reliability Low ...

Maximum Continuous Collector Current = 120 A Maximum Collector Emitter Voltage = 750 V Maximum Gate Emitter Voltage = 15V Maximum Power Dissipation = 170 W Package Type = TO247PLUS

Maximum Continuous Collector Current = 40 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 166 W Package Type = PG-TO247-3 Pin Count = 3

Maximum Continuous Collector Current = 60 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 187 W Package Type = PG-TO247-3 Pin Count = 3

Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 250 W Package Type = PG-TO263-3 Pin Count = 3

The Infineon insulated-gate bipolar transistor with fast recovery antiparallel emitter controlled diode.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference

The Infineon high speed F5 technology insulated-gate bipolar transistor offering best-in-class efficiency in hard switching and resonant topologies.High Efficiency Low Switching Losses Increased Re...

The Infineon fieldstop technology insulated-gate bipolar transistor with soft fast recovery anti parallel emitter controlled diode.High Efficiency Low Switching Losses Increased Reliability Low Ele...

The Infineon insulated-gate bipolar transistor with positive temperature coefficient in saturation voltage.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference

Maximum Continuous Collector Current = 74 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20 V, ±30 V Maximum Power Dissipation = 250 W Package Type = PG-TO247-3 Pin Cou...