Mercateo

Afbeelding

Artikelnaam

Fabrikant/nr.

Prijs excl. BTW

Bestellen

92%

TFDU4101-TT3 Vishay, Infrared Transceiver, 900nm 115.2kbit/s, 1m Range, SMT, 9.7 x 4.7 x 4mm (1 zoekresultaat)

TFDU4101 IrDA Transceiver Module. Integrated within the transceiver module are a photo PIN diode, an infrared emitter (IRED), and a low-power control IC to provide a total front-end solution in a s...

Vishay

TFDU4101-TT3

vanaf € 3.493,95*
per 1.000 stuks

92%

STMicroelectronics STGIB15CH60TS-X IGBT Module 600 V SDIP2B-26L type X, Through Hole (2 zoekresultaten)

The STMicroelectronics SLLIMM - 2nd series IPM, 3-phase inverter, 20 A, 600 V, short-circuit rugged IGBT provides a compact, high-performance AC motor drive in a simple, rugged design.Internal boot...

ST Microelectronics

STGIB15CH60TS-X

vanaf € 11,127*
per stuk

92%

STMicroelectronics STGIB10CH60TS-X IGBT Module 600 V SDIP2B-26L type X, Through Hole (2 zoekresultaten)

The STMicroelectronics SLLIMM - 2nd series IPM, 3-phase inverter, 15 A, 600 V, short-circuit rugged IGBT provides a compact, high-performance AC motor drive in a simple, rugged design.85 kO NTC, UL...

ST Microelectronics

STGIB10CH60TS-X

vanaf € 9,201*
per stuk

92%

TFDU4101-TR3 Vishay, Infrared Transceiver, 900nm 115.2kbit/s, 1m Range, SMT, 9.7 x 4.7 x 4mm (1 zoekresultaat)

Vishay

TFDU4101-TR3

vanaf € 2.611,93*
per 1.000 stuks

92%

Infineon BSC0923NDIATMA1 Dual IGBT, 8-Pin PG-TISON-8, Through Hole (1 zoekresultaat)

Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 2.5 W Package Type = PG-TISON-8 Mounting Type = Through Hole Channel Type = N Pin Count = 8

Infineon

BSC0923NDIATMA1

vanaf € 0,46*
per stuk

92%

STMicroelectronics STGWA30HP65FB2 IGBT 650 V, 3-Pin TO-247 long leads (1 zoekresultaat)

The STMicroelectronics trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package, has a positive VCE(sat) temperature coefficient.Minimized tail current Tight p...

ST Microelectronics

STGWA30HP65FB2

vanaf € 2,112*
per stuk

92%

Infineon BSC0925NDATMA1 Dual IGBT, 8-Pin PG-TISON-8, Through Hole (1 zoekresultaat)

Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 30 W Package Type = PG-TISON-8 Mounting Type = Through Hole Channel Type = N Pin Count = 8

Infineon

BSC0925NDATMA1

vanaf € 0,329*
per stuk

92%

Infineon BSC16DN25NS3GATMA1 IGBT, 8-Pin PG-TDSON-8, Through Hole (1 zoekresultaat)

Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 62.5 W Package Type = PG-TDSON-8 Mounting Type = Through Hole Channel Type = N Pin Count = 8

Infineon

BSC16DN25NS3GATMA1

vanaf € 0,707*
per stuk

92%

onsemi BC556BTF PNP Digital Transistor, -65 V, 3-Pin TO-92 (4 zoekresultaten)

BC556: PNP Epitaxial Silicon TransistorHigh Voltage: BC556 VCEO= -65V Low Noise: BC559,BC560 Complement to BC546..BC550Switching and Amplifier Applications This product is general usage and suitabl...

onsemi

BC556BTF

vanaf € 0,0306*
per stuk

92%

onsemi BC807-25WT1G PNP Digital Transistor, -45 V, 3-Pin SOT-323 (3 zoekresultaten)

PNP General Purpose TransistorS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable These Devices are Pb−Free, Halogen Free/BFR Free

onsemi

BC807-25WT1G

vanaf € 0,0144*
per stuk

92%

onsemi BCW30LT1G PNP Digital Transistor, -32 V, 3-Pin SOT-23 (3 zoekresultaten)

Transistor Type = PNP Maximum Collector Emitter Voltage = -32 V Package Type = SOT-23 Mounting Type = Surface Mount Maximum Power Dissipation = 300 mW Minimum DC Current Gain = 215 Transistor Confi...

onsemi

BCW30LT1G

vanaf € 0,0174*
per stuk

92%

onsemi FJI5603DTU NPN Digital Transistor, 800 V, 3 + Tab-Pin TO-262 (2 zoekresultaten)

FJI5603D: NPN Silicon TransistorWide Safe Operating Area Small Variance in Storage Time Built-in Free Wheeling Diode High Voltage and High Speed Power Switch Application Electronic Ballast Applicat...

onsemi

FJI5603DTU

vanaf € 0,905*
per stuk

92%

onsemi FGY75T95LQDT IGBT 950 V, 3-Pin TO-247, Through Hole (1 zoekresultaat)

Trench Field Stop 4th generation Low Vcesat IGBT co−packaged with full current rated diodeMaximum Junction Temperature : TJ = 175℃ Positive Temperature Co−efficient for Easy Parallel Operating High...

onsemi

FGY75T95LQDT

vanaf € 189,3402*
per 30 stuks

92%

onsemi MJB45H11T4G PNP Digital Transistor, -80 V, 2 + Tab-Pin D2PAK (TO-263) (1 zoekresultaat)

The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power...

onsemi

MJB45H11T4G

vanaf € 388,944*
per 800 stuks

92%

onsemi MJB45H11G PNP Digital Transistor, -80 V, 2 + Tab-Pin D2PAK (TO-263) (1 zoekresultaat)

onsemi

MJB45H11G

vanaf € 25,23*
per 50 stuks

Toon: 10 15 20 50 100

Pagina: < 1 .. 121 122 123 124 125 126 127 128 129 130 131 .. 464 >

emitters (6.949 artikelen gevonden)