MOSFETs (11.978 artikelen)

Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspecti...

Channel Type = N Maximum Continuous Drain Current = 553.8 A Maximum Drain Source Voltage = 40 V Package Type = DFNW8 Mounting Type = Surface Mount Pin Count = 8 Maximum Drain Source Resistance = 64...

Channel Type = N Maximum Continuous Drain Current = 554.5 A Maximum Drain Source Voltage = 40 V Package Type = DFNW8 Mounting Type = Surface Mount Pin Count = 8 Maximum Drain Source Resistance = 66...

Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free Typical Appli...

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating tempera...

Channel Type = N Maximum Continuous Drain Current = 56 A Maximum Drain Source Voltage = 100 V Series = HEXFET Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance = 0.018 Ω M...

UltraFET® MOSFET, Fairchild Semiconductor. UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding h...

UltraFET® MOSFET, Fairchild Semiconductor. UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding h...

MOSFET N-Channel, TK4, TK5 Series, Toshiba

MOSFET N-Channel, TK4, TK5 Series, Toshiba

Channel Type = N Maximum Continuous Drain Current = 56 A Maximum Drain Source Voltage = 1200 V Package Type = TO-247 Mounting Type = Through Hole Pin Count = 3 Number of Elements per Chip = 1

Channel Type = N Maximum Continuous Drain Current = 56 A Maximum Drain Source Voltage = 1200 V Package Type = TO-247 Mounting Type = Through Hole Pin Count = 3 Number of Elements per Chip = 1

The Infineon CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to tradit...

Channel Type = N Maximum Continuous Drain Current = 56 A Maximum Drain Source Voltage = 1200 V Series = IMZ1 Mounting Type = Through Hole Pin Count = 4 Maximum Drain Source Resistance = 30 mΩ Chann...