N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost...
N-Channel Power MOSFET 150V to 600V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address a...
N-Channel Power MOSFET 150V to 600V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address a...
N-Channel Power MOSFET 150V to 600V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address a...
N-Channel Power MOSFET 150V to 600V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address a...
The Infineon HEXFET series N-channel power MOSFET. It utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This MOSFET is designed for surface mount...
Channel Type = N Maximum Continuous Drain Current = 23 A Maximum Drain Source Voltage = 30 V Series = HEXFET Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance = 0.045 Ω, 0...
Channel Type = N Maximum Continuous Drain Current = 23 A, 36 A Maximum Drain Source Voltage = 650 V Series = EF Mounting Type = Surface Mount Pin Count = 4 Maximum Drain Source Resistance = 0.071 Ω...
The Vishay SIHH070N60EF-T1GE3 is a EF series power MOSFET with fast body diode.4th generation E series technology Low figure-of-merit Low effective capacitance Reduced switching and conduction loss...