MOSFETs (11.915 artikelen)

Channel Type = N Maximum Continuous Drain Current = 127 A Maximum Drain Source Voltage = 1200 V Package Type = TO-247 Mounting Type = Through Hole Pin Count = 3 Number of Elements per Chip = 1

Channel Type = N Maximum Continuous Drain Current = 127 A Maximum Drain Source Voltage = 1200 V Package Type = TO-247-4 Mounting Type = Through Hole Pin Count = 4 Number of Elements per Chip = 1

Channel Type = N Maximum Continuous Drain Current = 127 A Maximum Drain Source Voltage = 1200 V Package Type = TO-247-4 Mounting Type = Through Hole Pin Count = 4 Number of Elements per Chip = 1

Channel Type = N Maximum Continuous Drain Current = 127 A Maximum Drain Source Voltage = 40 V Package Type = DPAK Mounting Type = Surface Mount

Channel Type = N Maximum Continuous Drain Current = 127 A Maximum Drain Source Voltage = 60 V Series = NTBGS3D Mounting Type = Surface Mount Pin Count = 7 Maximum Drain Source Resistance = 0.0037 Ω...

The ON Semiconductor 60V of power MOSFET used 127A of drain current with single N−channel. It has lower switching noise/EMI and minimize conduction losses.Low RDS(on) to minimize conduction losses ...

Channel Type = N Maximum Continuous Drain Current = 128 A Maximum Drain Source Voltage = 100 V Package Type = TO-220 Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 4.5...

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistan...

Channel Type = N Maximum Continuous Drain Current = 128 A Maximum Drain Source Voltage = 100 V Package Type = TO-220F Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 4....

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistan...

N-Channel Power MOSFET 60V to 80V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address ...

N-Channel Power MOSFET 60V to 80V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address ...

Channel Type = N Maximum Continuous Drain Current = 128 A Maximum Drain Source Voltage = 75 V Series = HEXFET Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance = 0.0058 Ω ...

The Infineon HEXFET series single N-Channel Power MOSFET integrated with D2PAK (TO-263) type package.Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability