Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ ; C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver ind...
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ ; C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver ind...
Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for e...
Channel Type = N Maximum Continuous Drain Current = 22 A Maximum Drain Source Voltage = 1000 V Series = C3M Mounting Type = Surface Mount Pin Count = 7 Maximum Drain Source Resistance = 170 mΩ Chan...
Channel Type = N Maximum Continuous Drain Current = 22 A Maximum Drain Source Voltage = 900 V Package Type = TO-263-7 Mounting Type = Surface Mount Pin Count = 7 Maximum Drain Source Resistance = 1...
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high-frequency power electronics applications, including renew...
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ ; C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver ind...
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ ; C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver ind...
Channel Type = N Maximum Continuous Drain Current = 30 A Maximum Drain Source Voltage = 1200 V Package Type = TO-247-4 Mounting Type = Through Hole Pin Count = 4 Maximum Drain Source Resistance = 7...
Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full adv...
Channel Type = N Maximum Continuous Drain Current = 30 A Maximum Drain Source Voltage = 1200 V Package Type = TO-263-7 Mounting Type = Surface Mount Pin Count = 7 Maximum Drain Source Resistance = ...
Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full adv...
Channel Type = N Maximum Continuous Drain Current = 30 A Maximum Drain Source Voltage = 1200 V Package Type = TO-247 Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 75 ...
Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology. Designers can reduce component-count by moving from silicon-based, three-level topologies to simple...
Silicon Carbide Power MOSFET, C3M Series, Cree Inc. New C3M Silicon Carbide (SiC) MOSFET technology Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range Ne...