Maximum Continuous Drain Current = 15 A Maximum Drain Source Voltage = 750 V Package Type = Reel Mounting Type = Surface Mount, Through Hole Pin Count = 4 Channel Mode = Enhancement Number of Eleme...
Maximum Continuous Drain Current = 15 A Maximum Drain Source Voltage = 750 V Package Type = Reel Mounting Type = Surface Mount, Through Hole Pin Count = 4 Channel Mode = Enhancement Number of Eleme...
Channel Type = N Maximum Continuous Drain Current = 3 A, 4 A Maximum Drain Source Voltage = 5 V, 12 V Series = E-Fuse Pin Count = 8 Maximum Drain Source Resistance = 0.04 Ω Maximum Gate Threshold V...
The STMicroelectronics integrated dual electronic fuse, designed to protect circuitry on its output from overcurrent and overvoltage events, in those applications requiring hot swap operation and i...
N-Channel STripFET™ Dual MOSFET, STMicroelectronics. STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
N-Channel STripFET™ Dual MOSFET, STMicroelectronics. STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Channel Type = N Maximum Continuous Drain Current = 45 A Maximum Drain Source Voltage = 650 V Package Type = H2PAK-7 Mounting Type = Surface Mount Pin Count = 7 Maximum Drain Source Resistance = 0....
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistan...
Channel Type = N Maximum Continuous Drain Current = 6 A Maximum Drain Source Voltage = 600 V Package Type = DPAK (TO-252) Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance...
The STMicroelectronics new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous g...
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery ch...
Channel Type = N Maximum Continuous Drain Current = 72 A Maximum Drain Source Voltage = 650 V Package Type = TO-247 Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 0.03...
Channel Type = N Maximum Continuous Drain Current = 56 A Maximum Drain Source Voltage = 56 A Package Type = TO-247 Mounting Type = Through Hole Pin Count = 3 Channel Mode = Enhancement Number of El...
Channel Type = N Maximum Continuous Drain Current = 56 A Maximum Drain Source Voltage = 56 A Package Type = TO-247 Mounting Type = Through Hole Pin Count = 3 Channel Mode = Enhancement Number of El...
Channel Type = N Maximum Continuous Drain Current = 92 A Maximum Drain Source Voltage = 92 A Package Type = TO-247 Mounting Type = Through Hole Pin Count = 3 Channel Mode = Enhancement Number of El...
Channel Type = N Maximum Continuous Drain Current = 92 A Maximum Drain Source Voltage = 92 A Package Type = TO-247 Mounting Type = Through Hole Pin Count = 3 Channel Mode = Enhancement Number of El...
Channel Type = N Maximum Continuous Drain Current = 92 A Maximum Drain Source Voltage = 92 A Package Type = TO247-4 Mounting Type = Through Hole Pin Count = 4 Channel Mode = Enhancement Transistor ...
Channel Type = N Maximum Continuous Drain Current = 92 A Maximum Drain Source Voltage = 92 A Package Type = TO247-4 Mounting Type = Through Hole Pin Count = 4 Channel Mode = Enhancement Transistor ...
Channel Type = N Maximum Continuous Drain Current = 25 A Maximum Drain Source Voltage = 750 V Package Type = PowerFLAT 5x6 HV Mounting Type = Surface Mount Pin Count = 4 Channel Mode = Enhancement ...
Channel Type = N Maximum Continuous Drain Current = 25 A Maximum Drain Source Voltage = 750 V Package Type = PowerFLAT 5x6 HV Mounting Type = Surface Mount Pin Count = 4 Channel Mode = Enhancement ...
Maximum Drain Source Voltage = 110 V Package Type = B4E Mounting Type = Surface Mount Pin Count = 5 Maximum Drain Source Resistance = 1 Ω Maximum Gate Threshold Voltage = 3V
The STMicroelectronics RF5L08350CB4 is a 400 W 50 V high-performance, internally matched LDMOS FET, designed for multiple applications over the frequency band 0.4 to 1 GHz.High efficiency and linea...
Package Type = DPAK (TO-252) Mounting Type = Surface Mount Pin Count = 3 Maximum Power Dissipation = 15 W Transistor Configuration = Single Maximum Operating Temperature = +150 °Cmm Height = 2.17mm
The device is manufactured in Planar technology with “;Base Island”; layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.This device is...
The device in manufactured in low voltage PNP planar technology by using a “;Base Island”; layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation ...
Package Type = SOT-223 Mounting Type = Surface Mount Pin Count = 3 Maximum Power Dissipation = 1.6 W Transistor Configuration = Single Width = 3.7mm Height = 1.8mm
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.Lower on voltage drop (VCE(sat)) Very soft ultra fast ...
Package Type = TO-220 Mounting Type = Through Hole Pin Count = 3 Channel Mode = Enhancement Maximum Gate Threshold Voltage = 6.5V Minimum Gate Threshold Voltage = 4.5V Maximum Power Dissipation = 6...
Maximum Continuous Drain Current = 33 A Maximum Drain Source Voltage = 1200 V Package Type = H2PAK-7 Mounting Type = Surface Mount Pin Count = 7 Maximum Drain Source Resistance = 0.105 O Maximum Ga...
The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistan...
Maximum Continuous Drain Current = 36 A Maximum Drain Source Voltage = 1200 V Package Type = HiP247 Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 0.7 O Maximum Gate T...
The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistan...
Maximum Continuous Drain Current = 60 A Maximum Drain Source Voltage = 1200 V Package Type = HiP247-4 Mounting Type = Through Hole Pin Count = 4 Maximum Drain Source Resistance = 5.2e+007 Ω Maximum...
The STMicroelectronics SCTWA60N is silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low...
The STMicroelectronics RF2L36075CF2 is a 75 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and S-Band radar applications in the frequency range from...
Maximum Drain Source Voltage = 60 V Series = RF2L Mounting Type = Surface Mount Pin Count = 2 Maximum Drain Source Resistance = 1 Ω Maximum Gate Threshold Voltage = 2.5V
Maximum Drain Source Voltage = 65 V Package Type = B4E Mounting Type = Surface Mount Pin Count = 4 Maximum Drain Source Resistance = 1 Ω Maximum Gate Threshold Voltage = 2.5V
The STMicroelectronics RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 16...
Maximum Continuous Drain Current = 90 A Maximum Drain Source Voltage = 1200 V Series = SCTH70N Mounting Type = Surface Mount Pin Count = 7 Maximum Drain Source Resistance = 0.21 O Maximum Gate Thre...
The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistan...
Channel Type = N Maximum Continuous Drain Current = 13 A Package Type = D2PAK (TO-263) Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance = 280 mΩ Channel Mode = Enhancemen...
The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh...
Channel Type = N Maximum Continuous Drain Current = 13 A Package Type = TO-220FP Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 280 mΩ Channel Mode = Enhancement Maxim...
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmes...
Channel Type = N Maximum Continuous Drain Current = 15 A Package Type = TO-220 Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 195 mΩ Channel Mode = Enhancement Maximum...
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recov...
Channel Type = N Maximum Continuous Drain Current = 15 A Maximum Drain Source Voltage = 600 V Package Type = PowerFLAT 8 x 8 HV Mounting Type = Surface Mount Pin Count = 5 Maximum Drain Source Resi...
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recov...
