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  IGBTs (1.642 artikelen)

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STMicroelectronics STGIK10M120T, P-Channel 3 Phase Smart Power Module, 10 A 1200 V, 30-Pin SDIPHP-30L, Through Hole (2 zoekresultaten) 
Maximum Continuous Collector Current = 10 A Maximum Collector Emitter Voltage = 1200 V Maximum Power Dissipation = 125 W Package Type = SDIPHP-30L Mounting Type = Through Hole Channel Type = P Pin ...
ST Microelectronics
STGIK10M120T
vanaf € 35,701*
per stuk
 
 stuk
Infineon FP15R12W1T4PBPSA1 IGBT Module, 15 A 1200 V EASY1B (1 zoekresultaat) 
The Infineon EasyPIM three phase input rectifier power integrated modules IGBT module with TRENCHSTOP IGBT7 technology. It has collector emitter voltage of 1200 V and forward current of 15 A. It is...
Infineon
FP15R12W1T4PBPSA1
vanaf € 35,921*
per stuk
 
 stuk
Vishay VS-GT180DA120U Single IGBT, 281 A 1200 V, 4-Pin SOT-227, Panel Mount (1 zoekresultaat) 
Maximum Continuous Collector Current = 281 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ± 20V Maximum Power Dissipation = 1.09 kW Package Type = SOT-227 Mounting Type...
Vishay
VS-GT180DA120U
vanaf € 36,137*
per stuk
 
 stuk
IXYS IXYN100N120C3 IGBT, 152 A 1200 V, 4-Pin SOT-227B, Surface Mount (1 zoekresultaat) 
IGBT Discretes, IXYS XPT series. The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losse...
IXYS
IXYN100N120C3
vanaf € 36,484*
per stuk
 
 stuk
Infineon FP15R12W1T4BOMA1 IGBT Module, 28 A 1200 V (1 zoekresultaat) 
Maximum Continuous Collector Current = 28 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = +/-20V Number of Transistors = 7
Infineon
FP15R12W1T4BOMA1
vanaf € 36,67*
per stuk
 
 stuk
Infineon IDP20E65D2 (1 zoekresultaat)
Infineon
IDP20E65D2XKSA1
vanaf € 36,71*
per 50 stuks
 
 verpakking
IXYS
MII75-12A3
vanaf € 36,891*
per stuk
 
 stuk
Infineon IKP06N60TXKSA1 IGBT, 6 A 600 V, 3-Pin TO-220, Through Hole (1 zoekresultaat) 
Infineon TrenchStop IGBT Transistors, 600 and 650V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range incl...
Infineon
IKP06N60TXKSA1
vanaf € 37,02*
per 50 stuks
 
 verpakking
Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V (3 zoekresultaten) 
Maximum Continuous Collector Current = 39 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = +/-20V Maximum Power Dissipation = 175 W
Infineon
FP25R12W2T4BOMA1
vanaf € 37,59*
per stuk
 
 stuk
Infineon FP25R12W2T7B11BPSA1 Hex IGBT, 25 A 1200 V, 23-Pin EasyPIM (1 zoekresultaat) 
The Infineon 25 A PIM IGBT module has compact design and used PRESSFIT contact technology. It has low on state voltage VCEsat.Overload operation up to 175°C 2.5 kV AC 1min insulation Al2O3 substrat...
Infineon
FP25R12W2T7B11BPSA1
vanaf € 37,80*
per stuk
 
 stuk
Infineon FP15R12W1T7B11BOMA1 Hex IGBT, 15 A 1200 V, 23-Pin EasyPIM (1 zoekresultaat) 
The Infineon 15 A PIM IGBT module has higher power density and also has lower system cost. It has low on state voltage VCEsat and Vf.Enhanced controllability of dv/dt Optimized switching losses for...
Infineon
FP15R12W1T7B11BOMA1
vanaf € 38,002*
per stuk
 
 stuk
IXYS IXA70I1200NA IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount (1 zoekresultaat) 
IGBT Discretes, IXYS XPT series. The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losse...
IXYS
IXA70I1200NA
vanaf € 38,464*
per stuk
 
 stuk
IXYS IXYT25N250CHV IGBT, 95 A 2500 V, 3-Pin TO-268HV, Surface Mount (1 zoekresultaat) 
Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages Higher efficiency...
IXYS
IXYT25N250CHV
vanaf € 38,515*
per stuk
 
 stuk
Infineon FP35R12W2T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY2B (1 zoekresultaat) 
The Infineon EasyPIM™ 2B 1200 V, 35 A three phase input rectifier PIM (Power Integrated Modules) IGBT module with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode, NTC and PressFIT contact technology....
Infineon
FP35R12W2T7B11BOMA1
vanaf € 38,67*
per stuk
 
 stuk
onsemi NFAM2012L5BT 3 Phase Bridge Smart Power Module, 20 A 1200 V DIP39, Through Hole (1 zoekresultaat) 
Maximum Continuous Collector Current = 20 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = 15V Number of Transistors = 6 Package Type = DIP39 Mounting Type = Through Hole...
onsemi
NFAM2012L5BT
vanaf € 38,953*
per stuk
 
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