Maximum Continuous Collector Current = 74 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20 V, ±30 V Maximum Power Dissipation = 250 W Package Type = PG-TO263-3 Pin Cou...
The Infineon high speed fast switching insulated-gate bipolar transistor with full current rated rapid 1 fast and soft antiparallel diode.High Efficiency Low Switching Losses Increased Reliability ...
Maximum Continuous Collector Current = 74 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20 V, ±30 V Maximum Power Dissipation = 333 W Package Type = PG-TO247-3 Pin Cou...
The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode.High Efficiency Low Switching Losses Increased Reliability Low Electr...
Maximum Continuous Collector Current = 79 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20 V, ±30 V Maximum Power Dissipation = 230 W Package Type = PG-TO263-3 Pin Cou...
Maximum Continuous Collector Current = 6.5 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 53.6 W Package Type = PG-TO252 Channel Type = N...
The Infineon IKD03N60RF is higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching. It has smooth switching performance leading to low EMI leve...
The Infineon IKD03N60RF is higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching. It has smooth switching performance leading to low EMI leve...
Maximum Continuous Collector Current = 6.5 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 53.6 W Package Type = PG-TO252 Channel Type = N...
The Infineon IKD03N60RF is higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching. It has smooth switching performance leading to low EMI leve...