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  IGBTs (1.626 artikelen)

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Infineon AIKW75N60CTXKSA1 IGBT, 80 A 600 V, 3-Pin PG-TO247-3 (1 zoekresultaat) 
The Infineon insulated-gate bipolar transistor with positive temperature coefficient in saturation voltage.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference
Infineon
AIKW75N60CTXKSA1
vanaf € 4,814*
per stuk
 
 stuk
Infineon AUIRG4BC30SSTRL Single IGBT, 34 A 600 V D2PAK (1 zoekresultaat) 
Maximum Continuous Collector Current = 34 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 100 W Package Type = D2PAK
Infineon
AUIRG4BC30SSTRL
vanaf € 2.051,112*
per 800 stuks
 
 verpakking
Infineon AUIRG4BC30SSTRL Single IGBT, 34 A 600 V D2PAK (1 zoekresultaat) 
Maximum Continuous Collector Current = 34 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 100 W Package Type = D2PAK
Infineon
AUIRG4BC30SSTRL
vanaf € 2,589*
per stuk
 
 stuk
Infineon AUIRG4PH50S Single IGBT, 141 A 1200 V TO-247AC (2 zoekresultaten) 
Maximum Continuous Collector Current = 141 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 543 W Package Type = TO-247AC
Infineon
AUIRG4PH50S
vanaf € 6,30*
per stuk
 
 stuk
Infineon AUIRG4PH50S Single IGBT, 141 A 1200 V TO-247AC (1 zoekresultaat) 
Maximum Continuous Collector Current = 141 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 543 W Configuration = Single
Infineon
AUIRG4PH50S
vanaf € 8,22*
per stuk
 
 stuk
Infineon AUIRGDC0250 Single IGBT, 141 A 1200 V Super-TO-220 (1 zoekresultaat) 
Maximum Continuous Collector Current = 141 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 543 W Package Type = Super-TO-220
Infineon
AUIRGDC0250
vanaf € 209,91*
per 50 stuks
 
 verpakking
Infineon AUIRGDC0250 Single IGBT, 141 A 1200 V Super-TO-220 (1 zoekresultaat) 
Maximum Continuous Collector Current = 141 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 543 W Package Type = Super-TO-220
Infineon
AUIRGDC0250
vanaf € 4,886*
per stuk
 
 stuk
Infineon AUIRGP4062D-E IGBT, 48 A 600 V, 3-Pin TO-247AD (1 zoekresultaat) 
The Infineon insulated-gate bipolar transistor with ultrafast soft recovery diode.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference
Infineon
AUIRGP4062D-E
vanaf € 4,336*
per stuk
 
 stuk
Infineon BSC018NE2LS transistor 25 V (2 zoekresultaten)
Infineon
BSC018NE2LSATMA1
vanaf € 0,501*
per stuk
 
 stuk
Infineon BSC018NE2LSATMA1 IGBT, 153 A 25 V, 8-Pin PG-TDSON-8, Through Hole (1 zoekresultaat) 
Maximum Continuous Collector Current = 153 A Maximum Collector Emitter Voltage = 25 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 2.5 W Package Type = PG-TDSON-8 Mounting Type =...
Infineon
BSC018NE2LSATMA1
vanaf € 0,443*
per stuk
 
 stuks
Infineon BSC0923NDI transistor 30 V (2 zoekresultaten)
Infineon
BSC0923NDIATMA1
vanaf € 0,529*
per stuk
 
 stuk
Infineon BSC0923NDIATMA1 Dual IGBT, 8-Pin PG-TISON-8, Through Hole (1 zoekresultaat) 
Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 2.5 W Package Type = PG-TISON-8 Mounting Type = Through Hole Channel Type = N Pin Count = 8
Infineon
BSC0923NDIATMA1
vanaf € 0,45*
per stuk
 
 stuks
Infineon BSC0925ND transistor 30 V (3 zoekresultaten)
Infineon
BSC0925NDATMA1
vanaf € 0,35*
per stuk
 
 stuk
Infineon BSC0925NDATMA1 Dual IGBT, 8-Pin PG-TISON-8, Through Hole (1 zoekresultaat) 
Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 30 W Package Type = PG-TISON-8 Mounting Type = Through Hole Channel Type = N Pin Count = 8
Infineon
BSC0925NDATMA1
vanaf € 0,329*
per stuk
 
 stuks
Infineon BSC16DN25NS3 G transistor 250 V (1 zoekresultaat)
Infineon
BSC16DN25NS3GATMA1
vanaf € 4.053,15*
per 5.000 stuks
 
 verpakking
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