Assortiment
Mijn Mercateo
Aanmelden/Registreren
Winkelwagen
 
 
 >  >  >  >  >  > IGBTs ---

  IGBTs (167 artikelen)

Verfijn uw zoekopdracht middels onderstaande filters:
Filter: Prijs vantot  Aanvullend zoekwoord 
Functies
☐
Toon
☐
☐
☑
☐
Afbeelding
Keurenmerk x
Bestellen
<
onsemi NGTB35N65FL2WG IGBT, 70 A 650 V, 3-Pin TO-247, Through Hole (1 zoekresultaat) 
IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
onsemi
NGTB35N65FL2WG
geen gegevens
vanaf € 5,97*
per 2 stuks
 
 verpakking
onsemi NGTB40N65FL2WG IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole (2 zoekresultaten) 
IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
onsemi
NGTB40N65FL2WG
geen gegevens
vanaf € 2,88*
per stuk
 
 stuk
onsemi NGTB40N65FL2WG IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole (1 zoekresultaat) 
IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
onsemi
NGTB40N65FL2WG
geen gegevens
vanaf € 6,69*
per 2 stuks
 
 verpakking
onsemi
NXH020F120MNF1PTG
geen gegevens
vanaf € 3.594,33816*
per 28 stuks
 
 verpakking
onsemi
NXH020F120MNF1PTG
geen gegevens
vanaf € 135,668*
per stuk
 
 stuk
onsemi
NXH040F120MNF1PTG
geen gegevens
vanaf € 2.338,80612*
per 28 stuks
 
 verpakking
onsemi
NXH040F120MNF1PTG
geen gegevens
vanaf € 90,681*
per stuk
 
 stuk
onsemi NXH100B120H3Q0PG IGBT Module, 61 A 1200 V Case 180BF (Pb-Free and Halide-Free) Press-Fit Pins (1 zoekresultaat) 
Maximum Continuous Collector Current = 61 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 2
onsemi
NXH100B120H3Q0PG
geen gegevens
vanaf € 1.453,086*
per 24 stuks
 
 verpakking
onsemi NXH100B120H3Q0PG IGBT Module, 61 A 1200 V Case 180BF (Pb-Free and Halide-Free) Press-Fit Pins (1 zoekresultaat) 
Maximum Continuous Collector Current = 61 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 2
onsemi
NXH100B120H3Q0PG
geen gegevens
vanaf € 124,676*
per stuk
 
 stuk
onsemi NXH100B120H3Q0PTG Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount (2 zoekresultaten) 
The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs...
onsemi
NXH100B120H3Q0PTG
geen gegevens
vanaf € 62,99*
per stuk
 
 stuk
onsemi NXH100B120H3Q0PTG Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount (1 zoekresultaat) 
Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 186 W Package Type = Q0BOOST Mounting Type = Surface Mount Channel Type = N Pin Count = 22...
onsemi
NXH100B120H3Q0PTG
geen gegevens
vanaf € 64,335*
per stuk
 
 stuk
onsemi NXH100B120H3Q0SG IGBT Module, 61 A 1200 V Case 180AJ (Pb-Free and Halide-Free) Solder Pins (1 zoekresultaat) 
Maximum Continuous Collector Current = 61 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 186 W Package Type = Case 180AJ (Pb-Free and H...
onsemi
NXH100B120H3Q0SG
geen gegevens
vanaf € 1.457,68608*
per 24 stuks
 
 verpakking
onsemi NXH100B120H3Q0SG IGBT Module, 61 A 1200 V Case 180AJ (Pb-Free and Halide-Free) Solder Pins (1 zoekresultaat) 
Maximum Continuous Collector Current = 61 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 186 W Package Type = Case 180AJ (Pb-Free and H...
onsemi
NXH100B120H3Q0SG
geen gegevens
vanaf € 124,506*
per stuk
 
 stuk
onsemi NXH100B120H3Q0STG Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount (2 zoekresultaten) 
Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 186 W Configuration = Dual Mounting Type = Surface Mount Channel Type = N Pin Count = 22 T...
onsemi
NXH100B120H3Q0STG
geen gegevens
vanaf € 63,341*
per stuk
 
 stuk
onsemi NXH100B120H3Q0STG Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount (1 zoekresultaat) 
The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs...
onsemi
NXH100B120H3Q0STG
geen gegevens
vanaf € 65,532*
per stuk
 
 stuk
>
Toon: 10   15   20   50   100    Pagina: <   1   2   3   4   5   6   7   8   9   10   11   12   >
* Prijzen excl. BTW
Mercateo verkoopt uitsluitend aan zakelijke klanten.