Maximum Continuous Collector Current = 25 A Maximum Collector Emitter Voltage = 475 V Maximum Gate Emitter Voltage = 16V Maximum Power Dissipation = 150 W Package Type = D2PAK Mounting Type = Surfa...
This application-specific IGBT utilizes the most advanced PowerMESH™ technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-st...
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduct...
Maximum Continuous Collector Current = 50 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 167 W Package Type = D2PAK (TO-263) Pin Count = 3
Maximum Continuous Collector Current = 86 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 272 W Package Type = D2PAK (TO-263) Pin Count = 3
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduct...
This application-specific IGBT utilizes the most advanced PowerMESH™ technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-st...
Maximum Continuous Collector Current = 25 A Maximum Collector Emitter Voltage = 475 V Maximum Gate Emitter Voltage = 16V Maximum Power Dissipation = 125 W Package Type = DPAK Mounting Type = Surfac...
Maximum Continuous Collector Current = 40 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 45 W Package Type = TO-220FP Pin Count = 3
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduct...
Maximum Continuous Collector Current = 50 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 50 W Package Type = TO-220FP Pin Count = 3
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduct...
Maximum Continuous Collector Current = 60 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Number of Transistors = 1 Configuration = Single
Maximum Continuous Collector Current = 60 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 260 W Package Type = H2PAK-2
SLLIMM™ Intelligent Power Modules, STMicroelectronics. STMicroelectronics has extended its offering of IGBT intelligent power modules with the introduction of the second series of SLLIMM intelligen...
