Bipolar Transistors (3.609 artikelen)

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic b...

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. Single Resistor Digital Transistors, ON Semiconductor

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. Single Resistor Digital Transistors, ON Semiconductor

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. Dual Resistor Digital NPN Transistors, ON Semiconductor

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. Dual Resistor Digital NPN Transistors, ON Semiconductor

Package Type = TO-3P Mounting Type = Through Hole Maximum Power Dissipation = 312 W Pin Count = 3 Number of Elements per Chip = 1 Maximum Operating Temperature = +150 °Cmm

UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and hi...

UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and hi...

Package Type = TO-3P Mounting Type = Through Hole Maximum Power Dissipation = 500 W Pin Count = 3 Number of Elements per Chip = 1 Dimensions = 16.2 x 5 x 18.9mm

Package Type = D2PAK Mounting Type = Surface Mount Maximum Power Dissipation = 313 W Pin Count = 2 + Tab Number of Elements per Chip = 1 Maximum Operating Temperature = +150 °Cmm

UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and hi...

Package Type = TSOT-23 Mounting Type = Surface Mount Maximum Power Dissipation = 1.6 W Pin Count = 6 Number of Elements per Chip = 1 Maximum Operating Temperature = +150 °Cmm

N-Channel PowerTrench® MOSFET, Logic Level, 60V, 4A, 60mΩRDS(on) = 47mO at VGS = 10V, ID = 4.3A RDS(on) = 60mO at VGS = 4.5V, ID = 4A Typ Qg(TOT) = 14.5nC at VGS = 10V Low Miller Charge Application...

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.Max rDS(on) = 109 mΩat VGS = 10 V, ID = 2.7 A Max...

Package Type = TSOT-23 Mounting Type = Surface Mount Maximum Power Dissipation = 1.6 W Pin Count = 6 Number of Elements per Chip = 1 Maximum Operating Temperature = +150 °Cmm