Bipolar Transistors (1.286 artikelen)

These dual P-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailore...

Package Type = SC-70 Mounting Type = Surface Mount Maximum Power Dissipation = 300 mW Pin Count = 6 Number of Elements per Chip = 2 Maximum Operating Temperature = +150 °Cmm

Package Type = SC-70 Mounting Type = Surface Mount Maximum Power Dissipation = 300 mW Pin Count = 6 Number of Elements per Chip = 2 Dimensions = 2.2 x 1.35 x 1mm

These dual N & P-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tai...

This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET lead frame.RDS(on) = 30mΩ @ VGS = 4.5 V, ID = 5.7A RDS(on...

Package Type = MicroFET 2 x 2 Mounting Type = Surface Mount Maximum Power Dissipation = 2.4 W Transistor Configuration = Single Pin Count = 6 Number of Elements per Chip = 1 Dimensions = 2 x 2 x 0....

This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.RDS(on) = 40mΩ @ VGS = 4.5 V, ID = 5.0A RDS(on)...

Package Type = MicroFET 2 x 2 Mounting Type = Surface Mount Maximum Power Dissipation = 2.4 W Pin Count = 6 Number of Elements per Chip = 1 Maximum Operating Temperature = +150 °Cmm

Package Type = WDFN Mounting Type = Surface Mount Maximum Power Dissipation = 1.6 W Pin Count = 8 Number of Elements per Chip = 2 Maximum Operating Temperature = +150 °Cmm

These N-Channel Logic Level MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching perf...

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.Max r...

Package Type = PQFN Mounting Type = Surface Mount Maximum Power Dissipation = 41 W Pin Count = 8 Number of Elements per Chip = 1 Maximum Operating Temperature = +150 °Cmm

This P-Channel MOSFET is produced using an advanced PowerTrench® technology. This very high density process is especially tailored to minimize on- state resistance and optimizad for superior switch...

Package Type = MLP 3.3 x 3.3 Mounting Type = Surface Mount Maximum Power Dissipation = 40 W Pin Count = 8 Number of Elements per Chip = 1 Maximum Operating Temperature = +150 °Cmm

This N-Channel MOSFET is produced using an advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.RDS(on) = 6.25mΩ...